Spirit Electronics and EPC to Provide Data Packs for eGaN® Power Devices

Efficient Power Conversion (EPC,) in partnership with Spirit Electronics, will provide manufacturing lot-specific data services for their industry-leading gallium nitride-based power devices.

Spirit Electronics announces a partnership with EPC to provide an expanded range of manufacturing lot-specific data services for their industry-leading enhancement-mode gallium nitride (GaN) devices.

“Our partnership with Spirit Electronics provides the opportunity for EPC to complement Spirit’s extensive history and proven successful track record in working with defense and aerospace customers,” commented Alex Lidow, CEO and co-founder of EPC. “Offering lot-specific data services related to our eGaN power semiconductor products will enable us to bring additional value to these demanding applications.”

Marti McCurdy, CEO of Spirit Electronics, noted that, “Our partnership with EPC has been an exciting addition to our portfolio of products and this new offering of lot-specific data services will further help us bring the superior performance of eGaN power transistors and ICs to defense and aerospace customers, so they can design leading-edge power system solutions.”

EPC is offering a variety of data pack services for their eGaN FETs and ICs. More information can be found at: epc-co.com/epc/Products/DataPacks.aspx

About EPC

EPC is the leader in enhancement mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (Lidar), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

Visit the EPC web site: www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Gallium Nitride-based Transistors

Due to their increased frequency capability and ultra-low RDS(ON), eGaN FETs and integrated circuits increase the performance of applications using standard silicon MOSFETs and enable applications that were not achievable with silicon technology. GaN devices save space, improve efficiency, increase manufacturing efficiencies, and lower system costs.