Vishay’s dual N-channel 60-V MOSFET delivers increased power density and efficiency for a range of applications, including battery management systems, plug-in and wireless chargers, DC/DC converters, and power supplies.
Vishay’s new Siliconix SiSF20DN common-drain dual N-channel 60-V MOSFET in a compact, thermally enhanced PowerPAK 1212-8SCD package is designed to increase power density and efficiency in battery management systems, plug-in and wireless chargers, DC/DC converters, and power supplies.
The package construction — two monolithically integrated TrenchFET Gen IV N-channel MOSFETs in a common drain configuration — also makes the MOSFET well-suited for bidirectional switching in 24-V systems and industrial applications, including factory automation, power tools, drones, motor drives, white goods, robotics, security/surveillance, and smoke alarms.
The SiSF20DN claims the industry’s lowest RSS(ON) in a 60-V common-drain device, down to 10 mΩ typical at 10 V, the lowest among 60-V devices in a 3 × 3-mm footprint, according to Vishay. This value represents a 42.5% improvement over the next best solution in this footprint size and is 89% lower than Vishay’s previous-generation devices, said Vishay. The result is reduced voltage drops across the power path and minimized power losses for increased efficiency.
In addition, for higher power density, the dual-MOSFET’s RS1-S2(ON) times area is 46.6% lower than the next best alternative MOSFET, even when including larger 6 × 5-mm solutions, said Vishay.
The SiSF20DN is 100% Rg- and UIS-tested, RoHS-compliant, and halogen-free. Samples and production quantities are available now, with lead times of 30 weeks for larger orders. Get a quote.